The magneto-resistance effect (MR effect) describes the change in the electrical resistance of a material due to the application of a magnetic field. The giant magneto-resistance effect was discovered in 1988. Several other magneto-resistive effects have been discovered, and they are classified under XMR effects or XMR technology.
Research advances related to electron spin, tunneling effects, and production of ultra-thin layers have made possible the design of electrical devices based on quantum mechanical effects of the electron.
